Paper Title:
MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization
  Abstract

We have demonstrated the production of gallium oxide thin films on various substrates such as Si(111), SiO2, and sapphire by metalorganic chemical vapor deposition using the trimethylgallium (TMGa) as a precursor in the presence of oxygen. The XRD data revealed that the as-deposited gallium oxide films were fully amorphous but very small crystallites with monoclinic structures were found with the thermal annealing at a sufficiently high temperature, regardless of substrate materials. The AFM analysis indicated that the surface roughness increased by the thermal annealing.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
3377-3380
DOI
10.4028/www.scientific.net/MSF.475-479.3377
Citation
H. W. Kim, N. H. Kim, "MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization", Materials Science Forum, Vols. 475-479, pp. 3377-3380, 2005
Online since
January 2005
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$32.00
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