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The Comparison Study of Field Emission Characteristics from (002)-Oriented AlN and W Tip

Journal Materials Science Forum (Volumes 475 - 479)
Volume PRICM-5
Edited by Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages 3591-3594
DOI 10.4028/www.scientific.net/MSF.475-479.3591
Citation Shuang Lin Yue et al., 2005, Materials Science Forum, 475-479, 3591
Online since January, 2005
Authors Shuang Lin Yue, C.Y. Zhi, Chang Zhi Gu
Keywords Aluminium Nitride (AlN), Field Emission, W Tip
Abstract

By using radio frequency magnetron reactive sputtering system, (002)-oriented AlN film was deposited on W tip. The field emission from (002)-oriented AlN film on W tip was studied and compared with that from the bare W tip in a high vacuum (≤10-6 Pa) chamber. It indicated that the enhanced electron emission could be obtained from the (002)-oriented AlN film on W tip. The corresponding Fowler-Nordheim plot of AlN presented a nonlinear behavior in nature related the high resistivity of AlN. Furthermore, the current-electric field (I-E) curve presented excellent reproducibility checked by repeated measurements.

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