Paper Title:
Preparation and Field Emission Characteristics of CNx Nanotubes Thin Film
  Abstract

Carbon nitride nanotubes (CN-NT) thin films were prepared on Ni-Cr coated glass substrate by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 600~650 °C. The morphology of the films were observed by scanning electron microscopy. The microstructure of the film were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction, and Raman spectroscopy. The characteristics of field emission of CN-NT thin films were measured. Experimental results indicate that the film structure and properties of the field electron emission are related to flow ratio of N2 to CH4. When the flow ratio of N2 to CH4 was 3.3, the obtained film had a better field electron emission characteristics. The turn-on field of the film was 3.7 V/µm . The current density was 413.3 µA/cm2 at an electric field of 8 V/µm.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
3595-3598
DOI
10.4028/www.scientific.net/MSF.475-479.3595
Citation
L. Zhang, H. Z. Ma, X. X. Li, N. Yao, B. L. Zhang, "Preparation and Field Emission Characteristics of CNx Nanotubes Thin Film", Materials Science Forum, Vols. 475-479, pp. 3595-3598, 2005
Online since
January 2005
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$32.00
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