Evolution of Stress-Induced Surface Damage and Stress-Relaxation of Electroplated Cu Films at Elevated Temperatures |
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| Journal | Materials Science Forum (Volumes 475 - 479) |
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| Volume | PRICM-5 |
| Edited by | Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie |
| Pages | 3641-3646 |
| DOI | 10.4028/www.scientific.net/MSF.475-479.3641 |
| Citation | Soo Jung Hwang et al., 2005, Materials Science Forum, 475-479, 3641 |
| Online since | January, 2005 |
| Authors | Soo Jung Hwang, Junichi Koike, Young Chang Joo |
| Keywords | Copper (Cu), Diffusional Creep, Power-Law Creep, Stress-Induced Surface Damages, Stress-Relaxation |
| Abstract | The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation. |
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