Paper Title:
Photoinduced Changes in Sn-Doped Sol-Gel Silica Glass Films
  Abstract

Sn-doped SiO2 thin films were fabricated on Si substrates by the Sol-Gel method. Permanent refractive index change was found using ultraviolet (UV) laser radiation at 248 nm. The photoinduced refractive index change increased after radiation and variety in the contents of Tin. The optical and surface properties of the films were characterized using X-ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry (VASE).

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
3705-3708
DOI
10.4028/www.scientific.net/MSF.475-479.3705
Citation
A. Li, H. Xing, C. Zhou, J. Shen, L. Zhang, W. Zheng, Y. Zhang, "Photoinduced Changes in Sn-Doped Sol-Gel Silica Glass Films", Materials Science Forum, Vols. 475-479, pp. 3705-3708, 2005
Online since
January 2005
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