Paper Title:
The Growth of GaN Films on Si Substrates by HVPE
  Abstract

GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN layers are deposited at different temperatures ranging from 400 to 900 °C. The surface property, the structure and optical properties of the GaN films with different LT-GaN layers are studied. When deposition temperature of LT-GaN layer is 600 °C, the GaN film shows the best properties.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
3783-3786
DOI
10.4028/www.scientific.net/MSF.475-479.3783
Citation
H. Yu, L. Chen, R. Zhang, X. Q. Xiu, Z. L. Xie, Y. D. Ye, S. L. Gu, B. Shen, Y. Shi, Y. D. Zheng, "The Growth of GaN Films on Si Substrates by HVPE", Materials Science Forum, Vols. 475-479, pp. 3783-3786, 2005
Online since
January 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: J.S. Kim, B.H. Park, T.J. Choi, Se Hyun Shin, Jae Chul Lee, Man Jong Lee, S.A. Seo, I.K. Yoo
Abstract:Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural...
1313
Authors: Chien Chen Diao, Chao Chin Chan, Chia Ching Wu, Cheng Fu Yang
Abstract:“GfE Coating Materials Company” had developed a novel AZOY transparent conducting oxide (TCO) material that used ZnO as raw material and...
653
Authors: Alexander Usikov, Sergey Yu. Kurin, Iosif S. Barash, Alexander D. Roenkov, Andrei Antipov, Oleg Khait, Oleg Medvedev, Heikki Helava, Yu.N. Makarov
5.2 Nitrides and other Materials
Abstract:Hydride Vapor Phase Epitaxy (HVPE) was used to grow 1-4 μm thick undoped GaN layers on 4H-SiC and sapphire substrates. To adjust mechanical...
1198