Paper Title:
Laser Doping and Recrystallization for Amorphous Silicon Films by Plasma-Enhanced Chemical Vapor Deposition
  Abstract

One of the most challenging problems to develop polycrystalline silicon thin-film solar cells is the growth of crystalline silicon on foreign, low-cost and low-temperature substrates. In this paper, a laser doping technique was developed for the plasma-deposited amorphous silicon film. A process combination of recrystallization and dopant diffusion (phosphorous or boron) was achieved simultaneously by the laser annealing process. The doping precursor was synthesized by a sol-gel method and was spin-coated on the sample. After laser irradiation, the grain size of the doped polycrystalline silicon was examined to be about 0.5~1.0 µm. The concentrations of 2×1019 and 5× 1018 cm-3 with Hall mobilities of 92.6 and 37.5 cm²/V-s were achieved for the laser-diffused phosphorous- and boron-type polysilicon films, respectively.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
3791-3794
DOI
10.4028/www.scientific.net/MSF.475-479.3791
Citation
D. S. Wuu, S. Y. Lien, J. H. Wang, H.-Y. Mao, I.-C. Hsieh, B.-R. Wu, P. C. Yao, "Laser Doping and Recrystallization for Amorphous Silicon Films by Plasma-Enhanced Chemical Vapor Deposition", Materials Science Forum, Vols. 475-479, pp. 3791-3794, 2005
Online since
January 2005
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$32.00
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