Paper Title:
High-Quality Semiconductor Carbon-Doped β-FeSi2 Film Synthesized by MEVVA Ion Implantation
  Abstract

Carbon-doped b-FeSi2 films synthesized by ion implantation are investigated with the aim to fabricate high-quality semiconducting b-FeSi2 layer on silicon substrate. According to transmission electron microscopy cross-section observations, carbon-doped films, with homogeneous thickness and smooth b/Si interface, have higher quality than binary Fe-Si films. In particular, annealing at 500 °C ~ 700 °C leads to the formation of a flat and continuous b-type silicide layer. Improved thermal stability of the b phase is also found. Optical emission spectroscopy measurements show that the doping influences only slightly the band gap values.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
3803-3806
DOI
10.4028/www.scientific.net/MSF.475-479.3803
Citation
X. N. Li, C. Dong, L. Xu, "High-Quality Semiconductor Carbon-Doped β-FeSi2 Film Synthesized by MEVVA Ion Implantation", Materials Science Forum, Vols. 475-479, pp. 3803-3806, 2005
Online since
January 2005
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$32.00
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