Paper Title:
Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth
  Abstract

We have demonstrated the preparation of the almost defect-free homoepitaxial layer and the defective layer, respectively, with and without applying the in-situ cleaning of the silicon substrate surface using electron cyclotron resonance hydrogen plasma. Secondary ion mass spectroscopy indicated that the interfacial oxygen and carbon concentrations, respectively, decreased and increased with the in-situ cleaning. We have investigated the effect of process parameters such as microwave power, d.c bias, and cleaning time, on the epitaxial growth, by evaluating the cross-sectional transmission electron microscopy images of the subsequently deposited Si homoepitaxial film.

  Info
Periodical
Materials Science Forum (Volumes 475-479)
Main Theme
Edited by
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Pages
4067-4070
DOI
10.4028/www.scientific.net/MSF.475-479.4067
Citation
H. W. Kim, "Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth", Materials Science Forum, Vols. 475-479, pp. 4067-4070, 2005
Online since
January 2005
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Alex Kabansky, Harry Lee
59
Authors: John Niccoli, Matt Cogrono, Michelle Eastlack, Dave McCane, Craig Carlson, Erik Young, Dave Chapek
Abstract:The interaction between photo resist and highly polymerizing dry etch chemistries results in the deposition of fluoropolymers on the bevel...
155
Authors: Rui Hasebe, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
Abstract:With a progress of device dimension miniaturization, an ultraclean wafer surface is continuously increasing its importance crucial for high...
189
Authors: Choong Kee Seong, Tae Soo Lim, Jeong Gil Lee, Jin I Lee, Ki Jong Park, Kyung Hyun Kim, Yu Gyun Shin
Chapter 3: Surface Chemistry and Functionalisation
Abstract:As the integration density of memory increases, a low resistivity gate electrode is essential to meet the current needs of high speed...
71
Authors: S. Norhafiezah, R.M. Ayub, Mohd Khairuddin Md Arshad, A.H. Azman, M.A. Farehanim, U. Hashim
Abstract:The cleaning process of the silicon wafer becomes one of the most important procedures in semiconductor fabrication. It is acknowledged to...
262