Photoelectrochemical Measurements on Cathodically Electrodeposited Films of Cadmium and Zinc Chalcogenide Compounds |
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| Journal | Materials Science Forum (Volumes 480 - 481) |
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| Volume | Cross-Disciplinary Applied Research in Materials Science and Technology |
| Edited by | A. Méndez-Vilas |
| Pages | 1-12 |
| DOI | 10.4028/www.scientific.net/MSF.480-481.1 |
| Citation | M. Bouroushian et al., 2005, Materials Science Forum, 480-481, 1 |
| Online since | March, 2005 |
| Authors | M. Bouroushian, T. Kosanovic |
| Keywords | Carrier Generation, Carrier Recombination, Crystalline Structure and Texture, Electrodeposition, Hall Measurements, II-VI Semiconductors, Nanocrystalline Material, Optical Properties of Thin Films, Semiconductor Photoelectrochemistry |
| Abstract | A variety of electrochemical and electrical techniques is employed in order to determine useful parameters of the optical behaviour of thin semiconducting films. In particular, this work is intended to the characterization of cathodically electrodeposited binary and ternary cadmium and zinc selenides and tellurides by photoelectrochemical (PEC) tests. Typical solid-state techniques, such as reflection, laser assisted photoreflection, resistivity and Hall effect measurements are used as well. A plain relation between crystal structure/film morphology and PEC behavior is established so long as the electrochemical preparation method is capable to explicitly control the deposit structure. In certain cases, a particular charge transfer mechanism in the semiconductor, associated with the existence of a nanostructure, is shown to result in higher photoconversion efficiencies as compared to larger-grained films. |
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