Paper Title:
Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon
  Abstract

A new metal-assisted chemical etching method using Na2S2O8 as an oxidant is proposed to form a porous layer on a multicrystalline silicon (mc-Si). This method does not need an external bias and enables formation of uniform porous silicon layers, more rapidly than the conventional stain etching method. A thin layer of Pd is deposited on the mc-Si surface prior to immersion in a solution of HF and Na2S2O8. The characterisations of etched layer formed by this method as a function of etching time were investigated by scanning electron microscopy, X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) and reflectance spectroscopy. It shows that the surface is porous and the etching is independent of grain orientation. In addition, reflectance measurements made with a variety of etching conditions show a lowering of the reflectance from 25 % to 6 % measured with respect to the bare as-cut substrate. However, this result can be improved by changing the experimental conditions (concentration, time, temperature, …).

  Info
Periodical
Materials Science Forum (Volumes 480-481)
Edited by
A. Méndez-Vilas
Pages
139-144
DOI
10.4028/www.scientific.net/MSF.480-481.139
Citation
T. Hadjersi, N. Gabouze, A. Ababou, M. Boumaour, W. Chergui, H. Cheraga, S. Belhouse, A. Djeghri, "Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon", Materials Science Forum, Vols. 480-481, pp. 139-144, 2005
Online since
March 2005
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