Paper Title:
Silicon Oxynitride ECR-PECVD Films for Integrated Optics
  Abstract

In this work we present results of Si/SiO2/SiON/SiO2 waveguides fabricated by means of ECR-PECVD. In order to change refraction index and simultaneously to reduce losses related with hydrogen, we have used N2 as precursor gas for controlling the nitrogen to oxygen relation present in the samples. The composition of the samples were carefully controlled by RBS and ERDA analysis. The refractive index and thickness were measured by using a prisma coupler method at a wavelength of 632.8 nm.

  Info
Periodical
Materials Science Forum (Volumes 480-481)
Edited by
A. Méndez-Vilas
Pages
149-154
DOI
10.4028/www.scientific.net/MSF.480-481.149
Citation
P.L. Pernas, E. Ruiz, J. Garrido, J. Piqueras, F. Paszti, A. Climent-Font, G. Lifante, E. Cantelar, "Silicon Oxynitride ECR-PECVD Films for Integrated Optics", Materials Science Forum, Vols. 480-481, pp. 149-154, 2005
Online since
March 2005
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