Paper Title:
Study of Donor Centres in n-InSb due to the Temperature Annealing
  Abstract

An increasing of donor centres has been detected in n-InSb when it was submitted to anneal/quench with various annealing temperature (450 °C - 850 °C) and various annealing time (5 - 100 hours). A theoretical study of the kinetics of the conduction conversion of n-InSb at temperature annealing above 250 °C has been made. The present analysis indicates that the donor concentration increases with increasing of annealing time. In order to study this variation and to give a model for donor centres generated, a proposed model based on the simple kinetic is used to fit the variation of donor concentration as a function of annealing time. However, from the best fit of experimental data using the proposed model, the activation energy is determined.

  Info
Periodical
Materials Science Forum (Volumes 480-481)
Edited by
A. Méndez-Vilas
Pages
197-200
DOI
10.4028/www.scientific.net/MSF.480-481.197
Citation
Y. Sayad, A. Nouiri, "Study of Donor Centres in n-InSb due to the Temperature Annealing", Materials Science Forum, Vols. 480-481, pp. 197-200, 2005
Online since
March 2005
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