Paper Title:
Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires
  Abstract

Nanoscale metallic wires play a pivotal role in future microelectronics. Extremely high current densities, present in silicon-based integrated circuits, cause wire destruction by electron-wind induced atomic migration and void formation. In the present paper we elaborate a theoretical model, which describes the interaction of impurity-vacancy pairs. Criteria are given for an optimum material selection, based on the atomic valence of matrix and alloying metal, which reduce (or enhance) the probability of void formation.

  Info
Periodical
Materials Science Forum (Volumes 480-481)
Edited by
A. Méndez-Vilas
Pages
463-468
DOI
10.4028/www.scientific.net/MSF.480-481.463
Citation
A. Zehe, A. Ramírez, A. Patiño, "Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires ", Materials Science Forum, Vols. 480-481, pp. 463-468, 2005
Online since
March 2005
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