Paper Title:
Optical Properties of GaN on Si Substrate Using Plasma-Assisted MOCVD Technique in the Infrared and Visible Regions
  Abstract

In this paper, we report the characteristics of GaN heteroepitaxial films grown on Si(111)at 700oC using plasma-assisted metalorganic chemical vapour deposition (PA-MOCVD). In this growth technique, H2 plasma was used in addition to N2 plasma. Two sets of samples with different buffer layers were used, i.e. GaN and AlN buffer layers. In the infrared region both samples exhibit similar reststrahlen band shape. However the sample with GaN buffer layer exhibits better optical properties in the visible region compared with its counterpart. This is attributed to its better structural bulk and surface properties.

  Info
Periodical
Materials Science Forum (Volumes 480-481)
Edited by
A. Méndez-Vilas
Pages
519-524
DOI
10.4028/www.scientific.net/MSF.480-481.519
Citation
M. R. Hashim, S.A. Oh, S. S. Ng, H. Zainuriah, K. Ibrahim, M. Barmawi, Sugianto, M. Budiman, P. Arifin, "Optical Properties of GaN on Si Substrate Using Plasma-Assisted MOCVD Technique in the Infrared and Visible Regions", Materials Science Forum, Vols. 480-481, pp. 519-524, 2005
Online since
March 2005
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$32.00
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