Paper Title:
Characteristics of Ni-Based Bi-Layer Contacts on GaN
  Abstract

GaN-based materials have been the subject of intensive research recently for blue and ultraviolet light emission and high temperature/high power electronic devices. Ohmic contacts with low contact resistance are essential in improving the electrical and optical performances of the devices. A wide variety of contact metallizations have been reported for p-GaN, including the standard Ni/Au as well as Ni. Different surface pretreatments have been investigated to lower the contact resistivity. To employ metal layers as a reliable ohmic contact on GaN, it is essential to understand the thermal stability of metal-GaN contact in addition to developing low resistance ohmic system. In this paper, we report on the characteristics of Ni/Ag bi-layer contacts on p-type GaN. The structural and electrical stability of the contacts at various annealing temperatures (480°C – 780°C)were investigated. Changes in the surface morphology of the contacts on annealing were examined using scanning electron microscopy (SEM). Specific contact resistivity and barrier height, determined using transmission line method (TLM) and current-voltage (I-V) measurements were calculated.

  Info
Periodical
Materials Science Forum (Volumes 480-481)
Edited by
A. Méndez-Vilas
Pages
525-530
DOI
10.4028/www.scientific.net/MSF.480-481.525
Citation
H. Zainuriah, F.K. Yam, Z.J. Yap, A. A. Aziz, K. Ibrahim, "Characteristics of Ni-Based Bi-Layer Contacts on GaN", Materials Science Forum, Vols. 480-481, pp. 525-530, 2005
Online since
March 2005
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$32.00
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