Electroluminescence from GaInAsP/InP VCSEL |
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| Journal | Materials Science Forum (Volumes 480 - 481) |
|---|---|
| Volume | Cross-Disciplinary Applied Research in Materials Science and Technology |
| Edited by | A. Méndez-Vilas |
| Pages | 59-64 |
| DOI | 10.4028/www.scientific.net/MSF.480-481.59 |
| Citation | Asiye Ulug et al., 2005, Materials Science Forum, 480-481, 59 |
| Online since | March, 2005 |
| Authors | Asiye Ulug, Melek Tuncay Karabulut |
| Keywords | Electroluminescence, GaInAsP/InP, VCSELs |
| Abstract | Long-wavelength vertical cavity surface emitting lasers (VCSELs) operating in the 1.3 µm to 1.5 µm wavelength range are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the room temperature performance of GaInAsP/InP long-wavelength InP lattice matched material system falls below the shortwavelength VCSELs. In this work we present the results of our studies concerning I-V and electroluminescence measurements on GaInAsP/InP structure with distributed Bragg reflectors. The device lased at 0.98 µm at room temperature. |
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