Paper Title:
Electroluminescence from GaInAsP/InP VCSEL
  Abstract

Long-wavelength vertical cavity surface emitting lasers (VCSELs) operating in the 1.3 µm to 1.5 µm wavelength range are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the room temperature performance of GaInAsP/InP long-wavelength InP lattice matched material system falls below the shortwavelength VCSELs. In this work we present the results of our studies concerning I-V and electroluminescence measurements on GaInAsP/InP structure with distributed Bragg reflectors. The device lased at 0.98 µm at room temperature.

  Info
Periodical
Materials Science Forum (Volumes 480-481)
Edited by
A. Méndez-Vilas
Pages
59-64
DOI
10.4028/www.scientific.net/MSF.480-481.59
Citation
A. Ulug, M. T. Karabulut, "Electroluminescence from GaInAsP/InP VCSEL", Materials Science Forum, Vols. 480-481, pp. 59-64, 2005
Online since
March 2005
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