Paper Title:
Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition
  Abstract

Carbon nitride films were grown on Si substrates by a microwave plasma chemical vapor deposition method, using mixture of N2, CH4 and H2 as precursor. Scanning electron microscopy shows that the films consisted of a large number of hexagonal crystallites. The dimension of the largest crystallite is about 3 µm. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp2 and sp3 configurations. The X-ray diffraction pattern indicates that the major part of the films is composed of α-, β-, pseudocubic C3N4 and graphitic C3N4. The Raman peaks match well with the calculated Raman frequencies of α- and β-C3N4, revealing the formation of the α- and β-C3N4 phase.

  Info
Periodical
Materials Science Forum (Volumes 480-481)
Edited by
A. Méndez-Vilas
Pages
71-76
DOI
10.4028/www.scientific.net/MSF.480-481.71
Citation
J. C. Jiang, W. J. Cheng, Y. Zhang, H. S. Zhu, D. Z. Shen, "Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition", Materials Science Forum, Vols. 480-481, pp. 71-76, 2005
Online since
March 2005
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Price
$32.00
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