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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

• Papers
• Abstracts

• p4 Committees   [ 52 K ]
• p6 Preface   [ 26 K ]
• p3 Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes   [ 492 K ]
  Authors: Michel Pons, Elisabeth Blanquet, Jean Marc Dedulle, M. Ucar, Peter J. Wellmann, Örjan Danielsson, Pierre Ferret, Lea Di Cioccio, Francis Baillet, Didier Chaussende, Roland Madar
• p9 Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport   [ 2 M ]
  Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, Ejiro Emorhokpor, A. Gupta, R.H. Hopkins, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback, Wolfgang J. Choyke, Robert P. Devaty, Fei Yan
• p13 Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution   [ 535 K ]
  Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Y. Ueda, S. Naga, Y. Ito, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima
• p17 Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders   [ 296 K ]
  Authors: Soo Hyung Seo, Joon Suk Song, Myung Hwan Oh, Yen Zen Wang
• p21 A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT   [ 172 K ]
  Authors: Eugene Y. Tupitsyn, Arul Arjunan, Robert T. Bondokov, Robert M. Kennedy, Tangali S. Sudarshan
• p25 Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions   [ 269 K ]
  Authors: Peter J. Wellmann, Thomas L. Straubinger, Patrick Desperrier, Ralf Müller, Ulrike Künecke, Sakwe Aloysius Sakwe, Holger Schmitt, Albrecht Winnacker, Elisabeth Blanquet, Jean Marc Dedulle, Michel Pons
• p31 High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up   [ 423 K ]
  Authors: Ralf Müller, Ulrike Künecke, Roland Weingärtner, Holger Schmitt, Patrick Desperrier, Peter J. Wellmann
• p35 Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals   [ 275 K ]
  Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, Ejiro Emorhokpor, A. Gupta, R.H. Hopkins, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback
• p39 Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC   [ 295 K ]
  Authors: D. Siche, M. Albrecht, J. Doerschel, K. Irmscher, H. J. Rost, M. Rossberg, D. Schulz
• p43 Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals   [ 381 K ]
  Authors: Soo Hyung Seo, Joon Suk Song, Myung Hwan Oh, Yen Zen Wang
• p47 SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design   [ 419 K ]
  Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
• p53 Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor   [ 105 K ]
  Authors: Shinichi Nishizawa, Michel Pons
• p57 Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor   [ 183 K ]
  Authors: Alessandro Veneroni, Fabrizio Omarini, Maurizio Masi, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza