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Silicon Carbide and Related Materials 2004

Volumes 483 - 485
doi: 10.4028/www.scientific.net/MSF.483-485
Paper Titles published in this Main Theme:
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Committees

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Preface

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Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes

Authors: Michel Pons, Elisabeth Blanquet, Jean Marc Dedulle, M. Ucar, Peter Wellmann, Örjan Danielsson, Pierre Ferret, Lea Di Cioccio, Francis Baillet, Didier Chaussende, Roland Madar

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Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, Ejiro Emorhokpor, A. Gupta, R.H. Hopkins, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback, Wolfgang J. Choyke, Robert P. Devaty, Fei Yan

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Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution

Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Y. Ueda, S. Naga, Y. Ito, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima

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Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders

Authors: Soo Hyung Seo, Joon Suk Song, Myung Hwan Oh, Yen Zen Wang

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A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT

Authors: Eugene Y. Tupitsyn, Arul Arjunan, Robert T. Bondokov, Robert M. Kennedy, Tangali S. Sudarshan

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Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

Authors: Peter Wellmann, Thomas L. Straubinger, Patrick Desperrier, Ralf Müller, Ulrike Künecke, Sakwe Aloysius Sakwe, Holger Schmitt, Albrecht Winnacker, Elisabeth Blanquet, Jean Marc Dedulle, Michel Pons

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High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up

Authors: Ralf Müller, Ulrike Künecke, Roland Weingärtner, Holger Schmitt, Patrick Desperrier, Peter Wellmann

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Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals

Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, Ejiro Emorhokpor, A. Gupta, R.H. Hopkins, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback

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