Paper Title:
A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
  Abstract

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
1005-1008
DOI
10.4028/www.scientific.net/MSF.483-485.1005
Citation
P. Brosselard, T. Bouchet, D. Planson, S. Scharnholz, G. Pâques, M. Lazar, C. Raynaud, J.-P. Chante, E. Spahn, "A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery", Materials Science Forum, Vols. 483-485, pp. 1005-1008, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Andrej Mihaila, F. Udrea, Phillippe Godignon, T. Trajkovic, Gheorghe Brezeanu, Jose Rebollo, José Millan
891
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Keith P. Hilton, A.G. Munday, A.J. Hydes, Michael J. Uren, C. Mark Johnson
Abstract:High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial...
873
Authors: Viktoryia Uhnevionak, Christian Strenger, Alex Burenkov, Vincent Mortet, Elena Bedel-Pereira, Fuccio Cristiano, Anton J. Bauer, Peter Pichler
Chapter 7: Electrical and Structural Characterization
Abstract:4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical...
533
Authors: Lin Cheng, Anant K. Agarwal, Michael J. O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto A. Ogunniyi, Heather K. O'Brien, Charles Scozzie
Chapter 10: Device and Application
Abstract:In this work, we report our recently developed 16 kV, 1 cm2, 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm,...
895