Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor |
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| Journal | Materials Science Forum (Volumes 483 - 485) |
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| Volume | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 101-104 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.101 |
| Citation | Anne Henry et al., 2005, Materials Science Forum, 483-485, 101 |
| Online since | May, 2005 |
| Authors | Anne Henry, Erik Janzén |
| Keywords | Chemical Vapor Deposition (CVD), Phosphorus, Photoluminescence (PL) |
| Abstract | The phosphorus incorporation into SiC epilayer is studied when varying the CVD process growth parameters and the results are compared with thermodynamical calculations. Photoluminescence spectra are also presented. |
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