Paper Title:
Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
  Abstract

The phosphorus incorporation into SiC epilayer is studied when varying the CVD process growth parameters and the results are compared with thermodynamical calculations. Photoluminescence spectra are also presented.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
101-104
DOI
10.4028/www.scientific.net/MSF.483-485.101
Citation
A. Henry, E. Janzén, "Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor", Materials Science Forum, Vols. 483-485, pp. 101-104, 2005
Online since
May 2005
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Price
$35.00
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