Paper Title:
Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors
  Abstract

High performance SiC detectors for ionising radiation have been designed, manufactured and tested. Schottky junctions on low-doped epitaxial 4H-SiC with leakage current densities of few pA/cm2 at room temperature has been realised at this purpose. The epitaxial layer has been characterised at different dose of radiations in order to investigate the SiC radiation hardness. The response of the detectors to alpha and beta particle and to soft X-ray have been measured. High energy resolution and full charge collection efficiency have been successfully demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
1015-1020
DOI
10.4028/www.scientific.net/MSF.483-485.1015
Citation
G. Bertuccio, S. Binetti, S. Caccia, R. Casiraghi, A. Castaldini, A. Cavallini, C. Lanzieri, F. Nava, A. Le Donne, S. Pizzini, L. Rigutti, G. Verzellesi, "Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors", Materials Science Forum, Vols. 483-485, pp. 1015-1020, 2005
Online since
May 2005
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Price
$32.00
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