Paper Title:
Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors
  Abstract

Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm -3), 40 µm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/µm) equal to the estimated width of the depleted region.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
1021-1024
DOI
10.4028/www.scientific.net/MSF.483-485.1021
Citation
F. Moscatelli, A. Scorzoni, A. Poggi, M. Bruzzi, S. Lagomarsino, S. Mersi, S. Sciortino, M. Lazar, A. Di Placido, R. Nipoti, "Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors", Materials Science Forum, Vols. 483-485, pp. 1021-1024, 2005
Online since
May 2005
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$32.00
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