Paper Title:
High Energy Resolution Detectors Based on 4H-SiC
  Abstract

The spectrometric characteristics of the detectors based on 4H-SiC using 4.8-7.7 MeV a-particles were determined. The Cr Schottky barriers with areas of 1×10-2 cm2 were performed^by vacuum thermal evaporation on 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) with thickness 26 and 50 µm. The concentrations of the uncompensated donors into CVD epitaxial layers were (6-10) ×1014 cm-3, that allowed to develop a detector depletion region up to 30 µm using reverse bias of 400 V. The energy resolution less than 20 keV (0.34%) for lines of 5.0- 5.5 MeV was achieved that is twice as large of the resolution of high-precision Si-based detectors prepared on specialized technology. The maximum signal amplitude of 4H-SiC - detectors corresponding to the average electron-hole pair generation energy was found to be 7.70 eV.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
1029-1032
DOI
10.4028/www.scientific.net/MSF.483-485.1029
Citation
A. M. Ivanov, E. V. Kalinina, G. Kholuyanov , N. B. Strokan, G. Onushkin, A. O. Konstantinov, A. Hallén, A. Y. Kuznetsov, "High Energy Resolution Detectors Based on 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 1029-1032, 2005
Online since
May 2005
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