Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth |
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| Journal | Materials Science Forum (Volumes 483 - 485) |
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| Volume | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 105-108 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.105 |
| Citation | Galyna Melnychuck et al., 2005, Materials Science Forum, 483-485, 105 |
| Online since | May, 2005 |
| Authors | Galyna Melnychuck, Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt |
| Keywords | Chemical Vapor Deposition (CVD), Droplets, Epitaxial Growth, Hot-Wall CVD, Implant Annealing, Simulation |
| Abstract | Mechanisms and consequences of silicon vapor condensation during SiC epitaxial growth or implant annealing with silane overpressure were investigated. The model for the silicon liquid droplets formation in the gas phase and their deposition on the surface of the SiC substrate was developed. The droplet formation dependence on the silane flow rate, temperature profile in the reactor, and the local temperature variations introduced by the wafer carrier and SiC substrate were investigated. |
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