Paper Title:
Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
  Abstract

Mechanisms and consequences of silicon vapor condensation during SiC epitaxial growth or implant annealing with silane overpressure were investigated. The model for the silicon liquid droplets formation in the gas phase and their deposition on the surface of the SiC substrate was developed. The droplet formation dependence on the silane flow rate, temperature profile in the reactor, and the local temperature variations introduced by the wafer carrier and SiC substrate were investigated.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
105-108
DOI
10.4028/www.scientific.net/MSF.483-485.105
Citation
G. Melnychuck, Y. Koshka, M. S. Mazzola, J. L. Wyatt, "Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth", Materials Science Forum, Vols. 483-485, pp. 105-108, 2005
Online since
May 2005
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$32.00
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