Paper Title:
High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers
  Abstract

In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiBx nanostructure phase has been used during manufacturing Ti – Al – TiBx – Au and TiBx contact systems. The n-GaN epitaxial layers of 1 µm thickness were grown on [0001] sapphire substrate by vapor-phase epitaxy. The n-type 6H-SiC monocrystals were grown by Lely method with the donor concentration of 2x1018 cm3. The layers of Ti, Al, TiBx and Au were deposited by magnetron sputtering followed by high-temperature annealing.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
1061-1064
DOI
10.4028/www.scientific.net/MSF.483-485.1061
Citation
M. S. Boltovets, V.N. Ivanov, A.Y. Avksentyev, A.E. Belyaev, A.G. Borisenko, O.A. Fedorovitsh, R. V. Konakova, Y.Y. Kudryk, P. M. Lytvyn, V. V. Milenin, A.V. Sachenko, Y.N. Sveschnikov, "High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers", Materials Science Forum, Vols. 483-485, pp. 1061-1064, 2005
Online since
May 2005
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