Paper Title:
Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
  Abstract

Growth of 4H-SiC epitaxial layers has been performed in a horizontal hot-wall CVD (chemical vapor deposition) reactor using the silane-propane-hydrogen system. Two inch 4H-SiC, C-face wafers with an off-cut angle of about 7° towards <11 2 0> direction have been used as substrates. Micropipe dissociation has been investigated by varying the carbon-silicon (C/Si) ratio in the source gas atmosphere. Depending on the C/Si ratio the micropipes propagate into the layer without changing their image (C/Si > 1) or they dissociate in separate dislocations leaving a scar like formed surface region (C/Si £ 1). The substrates including epitaxial layers of reduced micropipe density were used as seeds for bulk crystal growth. If a micropipe is once closed in an epilayer grown at a low C/Si ratio, it is not opened in the subsequent growth process at high temperature.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
109-112
DOI
10.4028/www.scientific.net/MSF.483-485.109
Citation
G. Wagner, D. Schulz, J. Doerschel , "Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC ", Materials Science Forum, Vols. 483-485, pp. 109-112, 2005
Online since
May 2005
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$32.00
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