Paper Title:
CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
  Abstract

Thick epilayers up to 60 µm have been grown on ) 0 2 11 ( face SiC substrates at a growth rate of 15 µm/hr by chemical vapor deposition (CVD). The epilayer surface is extremely smooth with a RMS roughness of 0.6 nm for a 20µm×20µm area. Threading screw and edge dislocations parallel to the c-axis are present in the ) 0 2 11 ( substrate; however, they do not propagate into the epilayer. The I-V characteristics of the Schottky diodes on this face were studied. Basal plane (0001) dislocations with a density of ~105 cm-2 were found in the ) 0 2 11 ( epilayers by molten KOH etching and electron beam induced current (EBIC) mode of the scanning electron microscope (SEM).

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
113-116
DOI
10.4028/www.scientific.net/MSF.483-485.113
Citation
Z. H. Zhang, Y. Gao, A. Arjunan, E. Toupitsyn, P. Sadagopan, R. M. Kennedy, T. S. Sudarshan, "CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates", Materials Science Forum, Vols. 483-485, pp. 113-116, 2005
Online since
May 2005
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