Paper Title:
Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
  Abstract

We report on the study of the p-type doping of 4H-SiC material using HexaMethylDiSilane/TriMethylAluminium/Propane (HMDS/TMA/P) system in place of the usual Silane/TriMethylAluminium/Propane (S/TMA/P) precursors. The influence of growth parameters such as TMA flow, growth rate or C/Si ratio is investigated. The aluminium incorporation level is deduced from both by C(V) (mercury probe) and SIMS measurements. The presence of aluminium in the layers is confirmed by non-destructive optical micro-Raman experiments. Good quality p-type, aluminium doped 4H-SiC layers can be grown using HMDS/TMA/P system. The amount of aluminium in the layers can be controlled by choosing the growth conditions and an aluminium concentration as high as 2x1019 at.cm-3 has been reached.Finally, comparing the two HMDS/TMA/P and S/TMA/P systems, no difference in aluminium incorporation has been found.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
121-124
DOI
10.4028/www.scientific.net/MSF.483-485.121
Citation
C. Sartel, V. Soulière, M. Zielinski, Y. Monteil, J. Camassel, S. Rushworth, "Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane", Materials Science Forum, Vols. 483-485, pp. 121-124, 2005
Online since
May 2005
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$32.00
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