Paper Title:
Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
  Abstract

For preliminary step toward fabrication of MOSFET using 4H-SiC 8) 3 (03 prepared by sublimation method, epitaxial growth of device quality 4H-SiC on 4H-SiC (0001) 8.0° off substrate was carried out and investigated. Smooth and specular surface of 4H-SiC (0001) plane was obtained by optimum growth condition. And epitaxial growth on 4H-SiC 8) 3 (03 and ) 8 3 (03 substrates were carried out with optimum growth conditions of 4H-SiC (0001). Smooth and specular surface was obtained on 4H-SiC 8) 3 (03 and ) 8 3 (03 plane. Growth rate of epilayers of 4H-SiC (0001), 8) 3 (03 and ) 8 3 (03 face were same. Oxidation rate of 4H-SiC (0001), ) 1 (000 , 8) 3 (03 and ) 8 3 (03 face was investigated. The oxidation rate was different depending on the faces. It was observed that the difference of oxidation rate of 8) 3 (03 and ) 8 3 (03 is mainly due to the difference of polarity similar to the case of reported for (0001) and ) 1 (000 .

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
129-132
DOI
10.4028/www.scientific.net/MSF.483-485.129
Citation
S. Yoneda, T. Furusho, H. Takagi, S. Ohta, S. Nishino, "Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique", Materials Science Forum, Vols. 483-485, pp. 129-132, 2005
Online since
May 2005
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$32.00
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