Paper Title:
LPE of Silicon Carbide Using Diluted Si-Ge Flux
  Abstract

Epitaxial growth of 4H-SiC has been carried out at temperatures up to 1650 oC on 4HSiC substrates dipped in strongly diluted Si-based solutions. Liquid Phase Epitaxy (LPE) in conditions of low supersaturation was shown to be an effective technique to overgrow micropipe defects (MPs) in SiC wafers prepared by the Physical Vapour Transport (PVT) technique. The aim of this work was to investigate the SiC growth morphology and the dependence of MP elimination efficiency on Si-Ge flux composition. Macroscopically flat, single crystalline SiC layers of a thickness up to 10 µm were grown with a growth rate of about 0.5 µm/h. Stepped growth morphology was observed independent of the melt composition. Micropipes with the diameter below 5 µm were closed with an efficiency of about 80%. SEM investigations as well as inspection under reflected/transmitted light did not show any specific distortion of the growth morphology at the micropipe healing place.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
133-136
DOI
10.4028/www.scientific.net/MSF.483-485.133
Citation
O. Filip, B. M. Epelbaum, M. Bickermann, A. Winnacker, "LPE of Silicon Carbide Using Diluted Si-Ge Flux", Materials Science Forum, Vols. 483-485, pp. 133-136, 2005
Online since
May 2005
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Price
$32.00
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