Paper Title:
Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
  Abstract

The epitaxial overgrowth process was examined with a view to realizing the p-buried floating junction structure. The growth condition was investigated to reduce the p-type impurity contamination and to minimize the auto-doping. Total p-type impurity concentration was reduced to 1/50 of the n-type carrier concentration of the drift layers. The buried p-type floating structure was realized for the first time, using 4H-SiC material.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
147-150
DOI
10.4028/www.scientific.net/MSF.483-485.147
Citation
J. Nishio, C. Ota, T. Shinohe, K. Kojima, H. Okumura, "Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure", Materials Science Forum, Vols. 483-485, pp. 147-150, 2005
Online since
May 2005
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Price
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