Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
| Periodical | Materials Science Forum (Volumes 483 - 485) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 155-158 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.155 |
| Citation | Joseph J. Sumakeris et al., 2005, Materials Science Forum, 483-485, 155 |
| Online since | May, 2005 |
| Authors | Joseph J. Sumakeris, Mrinal K. Das, Seo Young Ha, Edward Hurt, Kenneth G. Irvine, Michael J. Paisley, Michael J. O'Loughlin, John W. Palmour, Marek Skowronski, H. McD. Hobgood, Calvin H. Carter Jr. |
| Keywords | Defect Density, Epilayer Uniformity, SiC Epitaxy, Vf Drift |
| Price | US$ 28,- |
We present a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices. During the last several years, we have advanced our hot-wall SiC epitaxial growth technology to the point that we can support the transition of bipolar power devices from demonstrations to applications. Two major concerns in developing a suitable epitaxial technology are epilayer uniformity and extended defect density. Our state-of-theart capability permits the realization of 1-cm2 area devices with exceptional yields. Another major concern is the stability of bipolar devices during forward conduction. We have developed proprietary substrate and epilayer preparation technologies that have essentially eliminated Vf drift as a significant barrier to the exploitation of SiC based bipolar devices.
