Paper Title:
Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
  Abstract

We present a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices. During the last several years, we have advanced our hot-wall SiC epitaxial growth technology to the point that we can support the transition of bipolar power devices from demonstrations to applications. Two major concerns in developing a suitable epitaxial technology are epilayer uniformity and extended defect density. Our state-of-theart capability permits the realization of 1-cm2 area devices with exceptional yields. Another major concern is the stability of bipolar devices during forward conduction. We have developed proprietary substrate and epilayer preparation technologies that have essentially eliminated Vf drift as a significant barrier to the exploitation of SiC based bipolar devices.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
155-158
DOI
10.4028/www.scientific.net/MSF.483-485.155
Citation
J. J. Sumakeris, M. K. Das, S. Y. Ha, E. Hurt, K. G. Irvine, M. J. Paisley, M. J. O'Loughlin, J. W. Palmour, M. Skowronski, H. McD. Hobgood, C. H. Carter Jr., "Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices", Materials Science Forum, Vols. 483-485, pp. 155-158, 2005
Online since
May 2005
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Price
$32.00
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