Paper Title:
Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
  Abstract

Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon. The island size distribution can be controlled by an appropriate substrate temperature, carbon fluxes and process times. Rate equation computer simulation was applied to simulate the experimental obtained nano scale nuclei properties.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
169-172
DOI
10.4028/www.scientific.net/MSF.483-485.169
Citation
K.L. Safonov, Y. V. Trushin, O. Ambacher, J. Pezoldt, "Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si", Materials Science Forum, Vols. 483-485, pp. 169-172, 2005
Online since
May 2005
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Price
$32.00
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