Paper Title:
Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
  Abstract

Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on hetero-epitaxial growth of 3C-SiC. (100) Si substrate patterned with SiO2 mask was used as the substrate. Before CVD process, V shape crater was made on Si surface by HCl etching. And growth condition of CVD was optimized. Single crystal of 3C-SiC was grown laterally on SiO2 layer. Cross-sectional transmission electron microscopic observation indicated that crystal quality of LEO region was single and no defect crystal.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
177-180
DOI
10.4028/www.scientific.net/MSF.483-485.177
Citation
S. Sugishita, A. Shoji, Y. Mukai, T. Nishiguchi, K. Michikami, T. Isshiki, S. Ohshima, S. Nishino, "Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method", Materials Science Forum, Vols. 483-485, pp. 177-180, 2005
Online since
May 2005
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Price
$32.00
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