Paper Title:
Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
  Abstract

Chemical vapor deposition of (111) 3C-SiC on (110) Si substrate was carried out, and the effect of the substrate off-axis introduced on (110) Si substrate for suppressing the twin formation in 3C-SiC hetero-epitaxial layers was investigated. From the growth on hemispherically polished (110) Si substrate, it was found that the off-axis toward the [001] Si axis had a noble effect for suppressing the twin formation, while the off-axis toward the [110] Si axis was ineffective. The growth of single 3C-SiC crystal containing few double positioning boundaries, which are related with the twin formation, was demonstrated on the (110) Si substrate 3° off-axis toward the [001] Si axis. Transmission electron microscopic observation revealed that double positioning boundaries on the (110) Si substrate off-axis toward the [001] Si axis were nearly eliminated within the initial a few hundreds nano meter in thickness.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
193-196
DOI
10.4028/www.scientific.net/MSF.483-485.193
Citation
T. Nishiguchi, M. Nakamura, K. Nishio, T. Isshiki, S. Ohshima, S. Nishino, "Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate", Materials Science Forum, Vols. 483-485, pp. 193-196, 2005
Online since
May 2005
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$32.00
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