Paper Title:
A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
  Abstract

4H-SiC crystals were grown using the seeded sublimation technique (modified Lely technique) in the temperature range of 1950-2200°C. The nucleation of 4H-SiC on 6HSiC has been optimized and 4H-SiC crystals of 1cm thickness were grown using 6H-SiC seeds. a-face and c-face wafers obtained from the grown boules were characterized by KOH etching, X-ray diffraction, and Raman scattering studies. Complete polytypic homogeneity of 4H SiC was obtained during growth and it was found that the 6H to 4H transition occurs in three ways: 1) without a transition layer, 2) with thick 6H-SiC layer growth, and 3) with traces of 3C SiC inclusions. The crown regions of the grown crystals exhibit an X-ray rocking curve width of 21 arcsecs.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
21-24
DOI
10.4028/www.scientific.net/MSF.483-485.21
Citation
E. Y. Tupitsyn, A. Arjunan, R. T. Bondokov, R. M. Kennedy, T. S. Sudarshan, "A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT", Materials Science Forum, Vols. 483-485, pp. 21-24, 2005
Online since
May 2005
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Price
$32.00
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