Paper Title:
Comparative Evaluation of Free-Standing 3C-SiC Crystals
  Abstract

The evolution of defects versus thickness has been investigated in three different freestanding 3C-SiC samples, using TEM (Transmission Electron Microscopy) and LTPL (Low Temperature Photo-Luminescence) spectroscopy. In all samples, the stacking fault density reduces rapidly within the first 20 µm of the growth. Then it remains constant, at about 5x103 cm-1 up to the end. This behavior is attributed to the easy generation of stacking faults, even under a very low thermal stress, as in-situ experiments reveal. On the opposite the elimination of inversion domains, by bending boundaries during the growth, is found to be sample dependant. This is in good agreement with LTPL results.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
229-232
DOI
10.4028/www.scientific.net/MSF.483-485.229
Citation
E. K. Polychroniadis, C. Balloud, S. Juillaguet, G. Ferro, Y. Monteil, J. Camassel, J. Stoemenos, "Comparative Evaluation of Free-Standing 3C-SiC Crystals", Materials Science Forum, Vols. 483-485, pp. 229-232, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Didier Chaussende, Jessica Eid, Frédéric Mercier, Roland Madar, Michel Pons
Abstract:The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable...
31
Authors: Maya Marinova, Ioannis Tsiaousis, N. Frangis, Efstathios K. Polychroniadis, Olivier Kim-Hak, Jean Lorenzzi, Gabriel Ferro
Abstract:The use of Ge very rich Si-Ge liquid phase during the heteroepitaxial growth of 3C-SiC on Si-face, on-axis 6H-SiC(0001) substrate by...
185
Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski
Abstract:The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...
199
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427
Authors: Michael R. Jennings, Amador Pérez-Tomás, Andrea Severino, Peter Ward, Arif Bashir, Craig Fisher, Stephen M. Thomas, Peter M. Gammon, Benedict T. Donnellan, Hua Rong, D.P. Hamilton, Philip A. Mawby
Chapter 4: Epitaxial Growth 3C SiC
Abstract:In this paper, we report on a novel direct wafer bonding technique; Si (111) wafers to polycrystalline silicon carbide carrier wafers. The...
271