Paper Title:
Comparative Evaluation of Free-Standing 3C-SiC Crystals
| Periodical | Materials Science Forum (Volumes 483 - 485) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 229-232 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.229 |
| Citation | Efstathios K. Polychroniadis et al., 2005, Materials Science Forum, 483-485, 229 |
| Online since | May, 2005 |
| Authors | Efstathios K. Polychroniadis, Carole Balloud, Sandrine Juillaguet, Gabriel Ferro, Yves Monteil, Jean Camassel, J. Stoemenos |
| Keywords | Free-Standing 3C-SiC, Inversion Domain Boundaries, Residual Doping, Structural Properties |
| Price | US$ 28,- |
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Abstract
The evolution of defects versus thickness has been investigated in three different freestanding 3C-SiC samples, using TEM (Transmission Electron Microscopy) and LTPL (Low Temperature Photo-Luminescence) spectroscopy. In all samples, the stacking fault density reduces rapidly within the first 20 µm of the growth. Then it remains constant, at about 5x103 cm-1 up to the end. This behavior is attributed to the easy generation of stacking faults, even under a very low thermal stress, as in-situ experiments reveal. On the opposite the elimination of inversion domains, by bending boundaries during the growth, is found to be sample dependant. This is in good agreement with LTPL results.
