Paper Title:
Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
| Periodical | Materials Science Forum (Volumes 483 - 485) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 233-236 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.233 |
| Citation | M. Voelskow et al., 2005, Materials Science Forum, 483-485, 233 |
| Online since | May, 2005 |
| Authors | M. Voelskow, D. Panknin, Efstathios K. Polychroniadis, Gabriel Ferro, Phillippe Godignon, Narcis Mestres, Wolfgang Skorupa, Yves Monteil, J. Stoemenos |
| Keywords | Carbon Implantation, Carbonization Process |
| Price | US$ 28,- |
View full size
Abstract
An approach for the defect density reduction in 3C-SiC epitaxially grown on Si is to improve the quality of the carbonized layer during the early stage of growth. For this reason the conventional carbonization process was replaced by a slower and nearer equilibrium carbonization method. Carbon is introduced by implantation into oxide of an oxidized Si substrate, near the SiO2/Si interface, and then it is transferred to the Si surface by annealing. Good quality 3C-SiC grains are formed embedded into the Si substrate, which are absolutely flat at the SiO2/Si interface. Another advantage of the new carbonization process is the elimination of the cavities due to the suppression of Si out-diffusion.
