Paper Title:
Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
  Abstract

An approach for the defect density reduction in 3C-SiC epitaxially grown on Si is to improve the quality of the carbonized layer during the early stage of growth. For this reason the conventional carbonization process was replaced by a slower and nearer equilibrium carbonization method. Carbon is introduced by implantation into oxide of an oxidized Si substrate, near the SiO2/Si interface, and then it is transferred to the Si surface by annealing. Good quality 3C-SiC grains are formed embedded into the Si substrate, which are absolutely flat at the SiO2/Si interface. Another advantage of the new carbonization process is the elimination of the cavities due to the suppression of Si out-diffusion.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
233-236
DOI
10.4028/www.scientific.net/MSF.483-485.233
Citation
M. Voelskow, D. Panknin, E. K. Polychroniadis, G. Ferro, P. Godignon, N. Mestres, W. Skorupa, Y. Monteil, J. Stoemenos, "Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing", Materials Science Forum, Vols. 483-485, pp. 233-236, 2005
Online since
May 2005
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Price
$35.00
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