Paper Title:
Microfabrication of Si Column Covered with SiC Film for Electron Emitter
  Abstract

The selective growth of Si column was carried out by depositing Au on patterned Si (111) substrate as a solvent in chemical vapor transport method by using halides (HCl). The Si column was produced by VLS mechanism. The column was covered with SiC by conventional CVD process using HMDS ( Hexamethyldisilane ). Carbon Nano Tube ( CNT ) was deposited on Si column covered with SiC by DC assisted µ-wave plasma CVD.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
237-240
DOI
10.4028/www.scientific.net/MSF.483-485.237
Citation
T. Nakata, Y. Ohshiro, A. Shoji, Y. Okui, S. Ohshima, Y. Hayashi, S. Nishino, "Microfabrication of Si Column Covered with SiC Film for Electron Emitter", Materials Science Forum, Vols. 483-485, pp. 237-240, 2005
Online since
May 2005
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$32.00
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