Paper Title:
A Short Synopsis of the Current Status of Porous SiC and GaN
  Abstract

A brief historical development of porous SiC and GaN is given. SEM images of nine porous morphologies in 4H, 6H and 3C SiC are shown along with anodization details. Similarly, two porous GaN morphologies are presented. Applications and future prospects are discussed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
251-256
DOI
10.4028/www.scientific.net/MSF.483-485.251
Citation
Y. Shishkin, Y. Ke, R. P. Devaty, W. J. Choyke, "A Short Synopsis of the Current Status of Porous SiC and GaN", Materials Science Forum, Vols. 483-485, pp. 251-256, 2005
Online since
May 2005
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