Paper Title:
A Short Synopsis of the Current Status of Porous SiC and GaN
| Periodical | Materials Science Forum (Volumes 483 - 485) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 251-256 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.251 |
| Citation | Y. Shishkin et al., 2005, Materials Science Forum, 483-485, 251 |
| Online since | May, 2005 |
| Authors | Y. Shishkin, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke |
| Keywords | Anodization, Application, History, Morphology, Porous |
| Price | US$ 28,- |
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Abstract
A brief historical development of porous SiC and GaN is given. SEM images of nine porous morphologies in 4H, 6H and 3C SiC are shown along with anodization details. Similarly, two porous GaN morphologies are presented. Applications and future prospects are discussed.
