Paper Title:
Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization
  Abstract

We have studied effects of thermal treatment in vacuum and wet oxidation on the optical transmission of SiC samples with porous layer on the Si face in the visible and near infrared spectral range. An analysis of changes in the absorption coefficient shows that the process of graphitization in vacuum begins at a temperature below 700°C and can be observed at wet oxidation at 1000°C.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
261-264
DOI
10.4028/www.scientific.net/MSF.483-485.261
Citation
V.B. Shuman, N.S. Savkina, "Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization", Materials Science Forum, Vols. 483-485, pp. 261-264, 2005
Online since
May 2005
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$35.00
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