Paper Title:
X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates
  Abstract

The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two geometrical configurations of defects determined to be stacking faults (SF) were revealed: i) with the images of triangular shape with the edge size 560 µm along the <10-10> directions; ii) linear shape along the [11-20] direction. The sources of SFs are located within the epilayer and start from the epilayer / porous layer interface. We propose that the source of SFs is connected with graphitization of porous layer at the temperature of epitaxy.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
265-268
DOI
10.4028/www.scientific.net/MSF.483-485.265
Citation
I.L. Shulpina, N.S. Savkina, V.B. Shuman, V.V. Ratnikov, M. Syväjärvi, R. Yakimova, "X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates", Materials Science Forum, Vols. 483-485, pp. 265-268, 2005
Online since
May 2005
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Price
$32.00
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