Paper Title:
On Current Limitations in Porous SiC Applications
  Abstract

Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at T=900–1700 0C in vacuum and Ar. Changes in composition of PSC under thermal treatment are correlated with porous structure modification. Limitations in PSC technology and applications due to compositional and structure evolution at high temperatures are discussed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
269-272
DOI
10.4028/www.scientific.net/MSF.483-485.269
Citation
M. G. Mynbaeva, A. Lavrent'ev, I. Kotousova, A.N. Volkova, K. Mynbaev, A. A. Lebedev, "On Current Limitations in Porous SiC Applications", Materials Science Forum, Vols. 483-485, pp. 269-272, 2005
Online since
May 2005
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