Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
| Periodical | Materials Science Forum (Volumes 483 - 485) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 315-318 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.315 |
| Citation | Tomohisa Kato et al., 2005, Materials Science Forum, 483-485, 315 |
| Online since | May, 2005 |
| Authors | Tomohisa Kato, Kazutoshi Kojima, Shinichi Nishizawa, Kazuo Arai |
| Keywords | Defect, Dislocation, Silicon Carbide (SiC), Single Crystal, Sublimation Growth, X-Ray Topography |
| Price | US$ 28,- |
We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.