Paper Title:

Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals

Periodical Materials Science Forum (Volumes 483 - 485)
Main Theme Silicon Carbide and Related Materials 2004
Edited by Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages 315-318
DOI 10.4028/www.scientific.net/MSF.483-485.315
Citation Tomohisa Kato et al., 2005, Materials Science Forum, 483-485, 315
Online since May, 2005
Authors Tomohisa Kato, Kazutoshi Kojima, Shinichi Nishizawa, Kazuo Arai
Keywords Defect, Dislocation, Silicon Carbide (SiC), Single Crystal, Sublimation Growth, X-Ray Topography
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Abstract

We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.