Paper Title:
Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
  Abstract

We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
315-318
DOI
10.4028/www.scientific.net/MSF.483-485.315
Citation
T. Kato, K. Kojima, S. I. Nishizawa, K. Arai, "Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals", Materials Science Forum, Vols. 483-485, pp. 315-318, 2005
Online since
May 2005
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$35.00
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