Paper Title:
Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
  Abstract

In 4H-SiC, 3C stacking fault (SF) behaves like a finite thickness type II quantum well. As a consequence, it can bind two excitons per well. We show in this work that, as the SF thickness increases, the relative intensity of the two transitions changes. This comes from a change in the wave functions overlap between the electron trapped in the well and the holes trapped neighbouring parts of the 4H-SiC matrix.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
331-334
DOI
10.4028/www.scientific.net/MSF.483-485.331
Citation
J. Camassel, S. Juillaguet, "Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix", Materials Science Forum, Vols. 483-485, pp. 331-334, 2005
Online since
May 2005
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