Paper Title:
Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
  Abstract

Focussing on the fine structure of excitons bound to large 2-dimensional stacking faults in a 4H-SiC matrix, we show that the intrinsic type-II nature of the band alignment, combined with the effect of the spontaneous polarization, should result in a double bound-exciton signature per well. Then, we present the first observation of a 3C-QW sandwiched between two higher energy bandgap polytypes in a 3C-SiC matrix.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
335-340
DOI
10.4028/www.scientific.net/MSF.483-485.335
Citation
S. Juillaguet, J. Camassel, "Specific Aspects of Type II Heteropolytype Stacking Faults in SiC", Materials Science Forum, Vols. 483-485, pp. 335-340, 2005
Online since
May 2005
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Price
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