Paper Title:
Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
  Abstract

New results are presented concerning several optical centres having local vibrational modes in electron irradiated and annealed 4H and 6H SiC. Some of these centres are common to both polytypes, others have only been found in 6H SiC. They appear, typically, after annealing in the range 1000°C - 1300°C. Additional results have been obtained about mode splitting from 13C isotope enriched 6H SiC.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
347-350
DOI
10.4028/www.scientific.net/MSF.483-485.347
Citation
J. W. Steeds, S.A. Furkert, W. Sullivan, J.M. Hayes, N. G. Wright, "Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide", Materials Science Forum, Vols. 483-485, pp. 347-350, 2005
Online since
May 2005
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