Paper Title:
Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
  Abstract

The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2 MeV. The electronic levels associated with the irradiation-induced defects were analyzed by current-voltage characteristics and deep level transient spectroscopy measurements up to 700 K. In the same temperature range the apparent free carrier concentration was measured by capacitance-voltage characteristics to monitor possible compensation effects due to the deep level associated to the induced defects. Introduction rate, enthalpy and capture cross-section of such deep levels were compared and some conclusions about the nature of the defects were drawn.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
359-364
DOI
10.4028/www.scientific.net/MSF.483-485.359
Citation
A. Castaldini, A. Cavallini, L. Rigutti, F. Nava, "Electronic Levels Induced by Irradiation in 4H-Silicon Carbide", Materials Science Forum, Vols. 483-485, pp. 359-364, 2005
Online since
May 2005
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Price
$32.00
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