Paper Title:
Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
  Abstract

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
365-368
DOI
10.4028/www.scientific.net/MSF.483-485.365
Citation
G. Alfieri, E. V. Monakhov, M. K. Linnarsson, B. G. Svensson, "Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 365-368, 2005
Online since
May 2005
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